Zenode.ai Logo
WSON (DRR)

LM74810QDRRRQ1

Active
Texas Instruments

AUTOMOTIVE IDEAL DIODE CONTROLLER WITH ACTIVE RECTIFICATION DRIVING B2B NFETS

Find alt
WSON (DRR)

LM74810QDRRRQ1

Active
Texas Instruments

AUTOMOTIVE IDEAL DIODE CONTROLLER WITH ACTIVE RECTIFICATION DRIVING B2B NFETS

Find alt

Description

General part information

LM74810 Series

The LM74810-Q1 ideal diode controller drives and controls external back to back N-Channel MOSFETs to emulate an ideal diode rectifier with power path ON/OFF control and over voltage protection. The wide input supply of 3 V to 65 V allows protection and control of 12-V and 24-V automotive battery powered ECUs. The device can withstand and protect the loads from negative supply voltages down to –65 V. An integrated ideal diode controller (DGATE) drives the first MOSFET to replace a Schottky diode for reverse input protection and output voltage holdup. A strong charge pump of 3.8 mA with 60-mA peak GATE source current driver stage and short turn ON and turn OFF delay times ensures fast transient response ensuring robust and efficient MOSFET switching performance during automotive testing such as ISO16750 or LV124 where an ECU is subjected to input short interruptions and AC superimpose input signals upto 200-KHz frequency. With a second MOSFET in the power path the device allows load disconnect (ON/OFF control) and over voltage protection using HGATE control. The device features an adjustable over voltage cut-off protection feature for load dump protection.

The LM74810-Q1 ideal diode controller drives and controls external back to back N-Channel MOSFETs to emulate an ideal diode rectifier with power path ON/OFF control and over voltage protection. The wide input supply of 3 V to 65 V allows protection and control of 12-V and 24-V automotive battery powered ECUs. The device can withstand and protect the loads from negative supply voltages down to –65 V. An integrated ideal diode controller (DGATE) drives the first MOSFET to replace a Schottky diode for reverse input protection and output voltage holdup. A strong charge pump of 3.8 mA with 60-mA peak GATE source current driver stage and short turn ON and turn OFF delay times ensures fast transient response ensuring robust and efficient MOSFET switching performance during automotive testing such as ISO16750 or LV124 where an ECU is subjected to input short interruptions and AC superimpose input signals upto 200-KHz frequency. With a second MOSFET in the power path the device allows load disconnect (ON/OFF control) and over voltage protection using HGATE control. The device features an adjustable over voltage cut-off protection feature for load dump protection.

Technical Specifications

Parameters and characteristics for this part

SpecificationLM74810QDRRRQ1
ApplicationsRedundant Power Supplies
Current - Supply408 µA
Delay Time - OFF500 ns
Delay Time - ON850 ns
FET TypeN-Channel
GradeAutomotive
Input Ratio1
Internal Switch(s)No
Mounting TypeWettable Flank, Surface Mount
Operating Temperature (Max)125 °C, 125 °C
Operating Temperature (Min)-55 °C, -40 °C
Output Ratio1
Package / Case12-WFDFN Exposed Pad
Package Length3 mm
Package Name12-WSON
Package Width3 mm
QualificationAEC-Q100
TypeN+1 ORing Controller
Voltage - Supply (Maximum)65 V
Voltage - Supply (Minimum)3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Sign in to see pricing

Create a free account to access distributor pricing data.

CAD

3D models and CAD resources for this part