IRS2108SPBF

Obsolete

Infineon Technologies

EICEDRIVER™ 600 V HALF BRIDGE DRIVER IC WITH TYPICAL 0.29 A SOURCE AND 0.6 A SINK OUTPUT CURRENTS. IT COMES WITH A FUNCTIONAL LEVELSHIFT SOIC 8N PACKAGE AND WORKS WITH IGBTS AND MOSFETS. FEATURES: SHOOT THROUGH PROTECTION

Deep-Dive with AI

Search across all available documentation for this part.

IRS2108SPBF

Obsolete

Infineon Technologies

Deep-Dive with AI

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IRS2108SPBF

Channel Type	Independent
Current - Peak Output (Source, Sink) [custom]	290 mA
Current - Peak Output (Source, Sink) [custom]	600 mA
Driven Configuration	Half-Bridge
Gate Type	N-Channel MOSFET, IGBT, MOSFET
High Side Voltage - Max (Bootstrap) [Max]	600 V
Input Type	Non-Inverting
Logic Voltage - VIL, VIH	2.5 V, 0.8 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature [Max]	125 °C
Operating Temperature [Min]	-40 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Rise / Fall Time (Typ) [custom]	35 ns
Rise / Fall Time (Typ) [custom]	100 ns
Supplier Device Package	8-SOIC
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	10 VDC

IRS2108 Series

Part	High Side Voltage - Max (Bootstrap) [Max]	Supplier Device Package	Input Type	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Number of Drivers	Package / Case	Package / Case [y]	Package / Case [x]	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Driven Configuration	Operating Temperature [Max]	Operating Temperature [Min]	Channel Type	Voltage - Supply [Max]	Voltage - Supply [Min]	Gate Type	Logic Voltage - VIL, VIH	Mounting Type	Package / Case	Package / Case
Infineon Technologies IRS2108SPBF	600 V	8-SOIC	Inverting Non-Inverting	290 mA	600 mA	2	8-SOIC	3.9 mm	0.154 in	35 ns	100 ns	Half-Bridge	150 °C	-40 °C	Independent	20 V	10 VDC	IGBT N-Channel MOSFET	0.8 V 2.5 V	Surface Mount
Infineon Technologies IRS2108PBF	600 V	8-PDIP	Inverting Non-Inverting	290 mA	600 mA	2	8-DIP			35 ns	100 ns	Half-Bridge	150 °C	-40 °C	Independent	20 V	10 VDC	IGBT N-Channel MOSFET	0.8 V 2.5 V	Through Hole	0.3 in	7.62 mm
Infineon Technologies IRS2108SPBF	600 V	8-SOIC	Non-Inverting	290 mA	600 mA	2	8-SOIC	3.9 mm	0.154 in	35 ns	100 ns	Half-Bridge	125 °C	-40 °C	Independent	20 V	10 VDC	IGBT MOSFET N-Channel MOSFET	0.8 V 2.5 V	Surface Mount

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	237	$ 1.27
		237	$ 1.27
		289	$ 1.04
		289	$ 1.04
	Tube	1	$ 2.15
		1	$ 2.15
		10	$ 1.93
		10	$ 1.93
		95	$ 1.55
		95	$ 1.55
		285	$ 1.46
		285	$ 1.46
		570	$ 1.28
		570	$ 1.28
		1045	$ 1.06
		1045	$ 1.06
		2565	$ 0.98
		2565	$ 0.98
		5035	$ 0.95
		5035	$ 0.95

Description

General part information

IRS2108 Series

600 V Half Bridge Driver IC with typical 0.29 A source and 0.6 A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs. Also available in 8 Lead PDIP, 14 Lead SOIC (IRS21084S), and 14 Lead PDIP (IRS21084). For the new version with ourSOI technologywe recommend2ED2108S06F, providing integrated bootstrap diode, better robustness and higher switching frequency

Documents

Technical documentation and resources

No documents available