IRS2108PBF

Obsolete

Infineon Technologies

IC: DRIVER; MOSFET HALF-BRIDGE; HIGH-/LOW-SIDE,GATE DRIVER; DIP8

Search across all available documentation for this part.

Obsolete

Infineon Technologies

IC: DRIVER; MOSFET HALF-BRIDGE; HIGH-/LOW-SIDE,GATE DRIVER; DIP8

Technical Specifications

Parameters and characteristics for this part

Specification	IRS2108PBF

Channel Type	Independent
Current - Peak Output (Source, Sink) [custom]	290 mA
Current - Peak Output (Source, Sink) [custom]	600 mA
Driven Configuration	Half-Bridge
Gate Type	N-Channel MOSFET, IGBT
High Side Voltage - Max (Bootstrap) [Max]	600 V
Input Type	Non-Inverting, Inverting
Logic Voltage - VIL, VIH	2.5 V, 0.8 V
Mounting Type	Through Hole
Number of Drivers	2
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	0.3 in
Package / Case	8-DIP
Package / Case	7.62 mm
Rise / Fall Time (Typ) [custom]	35 ns
Rise / Fall Time (Typ) [custom]	100 ns
Supplier Device Package	8-PDIP
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	10 VDC

Part	High Side Voltage - Max (Bootstrap) [Max]	Supplier Device Package	Input Type	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Number of Drivers	Package / Case	Package / Case [y]	Package / Case [x]	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Driven Configuration	Operating Temperature [Max]	Operating Temperature [Min]	Channel Type	Voltage - Supply [Max]	Voltage - Supply [Min]	Gate Type	Logic Voltage - VIL, VIH	Mounting Type	Package / Case	Package / Case
Infineon Technologies IRS2108SPBF	600 V	8-SOIC	Inverting Non-Inverting	290 mA	600 mA	2	8-SOIC	3.9 mm	0.154 in	35 ns	100 ns	Half-Bridge	150 °C	-40 °C	Independent	20 V	10 VDC	IGBT N-Channel MOSFET	0.8 V 2.5 V	Surface Mount
Infineon Technologies IRS2108PBF	600 V	8-PDIP	Inverting Non-Inverting	290 mA	600 mA	2	8-DIP			35 ns	100 ns	Half-Bridge	150 °C	-40 °C	Independent	20 V	10 VDC	IGBT N-Channel MOSFET	0.8 V 2.5 V	Through Hole	0.3 in	7.62 mm
Infineon Technologies IRS2108SPBF	600 V	8-SOIC	Non-Inverting	290 mA	600 mA	2	8-SOIC	3.9 mm	0.154 in	35 ns	100 ns	Half-Bridge	125 °C	-40 °C	Independent	20 V	10 VDC	IGBT MOSFET N-Channel MOSFET	0.8 V 2.5 V	Surface Mount

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General part information

Half-Bridge Gate Driver IC Inverting, Non-Inverting 8-PDIP

Technical documentation and resources

No documents available