GD5F4GQ6UEY2GY

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GigaDevice Semiconductor (HK) Limited

IC FLASH 4GBIT SPI/QUAD 8WSON

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GD5F4GQ6UEY2GY

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GigaDevice Semiconductor (HK) Limited

IC FLASH 4GBIT SPI/QUAD 8WSON

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	GD5F4GQ6UEY2GY

Access Time	9 ns
Clock Frequency	104 MHz
Memory Format	FLASH
Memory Interface	DTR, Quad I/O, SPI
Memory Organization	1 G
Memory Size	512 kb
Memory Type	Non-Volatile
Mounting Type	Surface Mount
Operating Temperature [Max]	105 °C
Operating Temperature [Min]	-40 °C
Package / Case	8-WDFN Exposed Pad
Supplier Device Package	8-WSON (6x8)
Technology	FLASH - NAND (SLC)
Voltage - Supply [Max]	3.6 V
Voltage - Supply [Min]	2.7 V
Write Cycle Time - Word, Page	600 µs

GD5F4GQ6 Series

Part	Memory Format	Write Cycle Time - Word, Page	Memory Interface	Access Time	Supplier Device Package	Technology	Memory Type	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Voltage - Supply [Min]	Voltage - Supply [Max]	Package / Case	Clock Frequency	Memory Size	Memory Organization
GigaDevice Semiconductor (HK) Limited GD5F4GQ6UEYIGY	FLASH	600 µs	SPI - Quad I/O	9 ns	8-WSON (6x8)	FLASH - NAND (SLC)	Non-Volatile	85 °C	-40 °C	Surface Mount	2.7 V	3.6 V	8-WDFN Exposed Pad	104 MHz	512 kb	512 M
GigaDevice Semiconductor (HK) Limited GD5F4GQ6UEYIGR	FLASH	600 µs	SPI - Quad I/O	9 ns	8-WSON (6x8)	FLASH - NAND (SLC)	Non-Volatile	85 °C	-40 °C	Surface Mount	2.7 V	3.6 V	8-WDFN Exposed Pad	104 MHz	512 kb	512 M
GigaDevice Semiconductor (HK) Limited GD5F4GQ6REY2GY	FLASH	600 µs	DTR Quad I/O SPI	11 ns	8-WSON (6x8)	FLASH - NAND (SLC)	Non-Volatile	105 °C	-40 °C	Surface Mount	1.7 V	2 V	8-WDFN Exposed Pad	80 MHz	512 kb	1 G
GigaDevice Semiconductor (HK) Limited GD5F4GQ6UEYJGR	FLASH	600 µs	SPI - Quad I/O	9 ns	8-WSON (6x8)	FLASH - NAND (SLC)	Non-Volatile	105 °C	-40 °C	Surface Mount	2.7 V	3.6 V	8-WDFN Exposed Pad	104 MHz	512 kb	512 M
GigaDevice Semiconductor (HK) Limited GD5F4GQ6UEY2GY	FLASH	600 µs	DTR Quad I/O SPI	9 ns	8-WSON (6x8)	FLASH - NAND (SLC)	Non-Volatile	105 °C	-40 °C	Surface Mount	2.7 V	3.6 V	8-WDFN Exposed Pad	104 MHz	512 kb	1 G
GigaDevice Semiconductor (HK) Limited GD5F4GQ6REYIGR	FLASH	600 µs	SPI - Quad I/O	11 ns	8-WSON (6x8)	FLASH - NAND (SLC)	Non-Volatile	85 °C	-40 °C	Surface Mount	1.7 V	2 V	8-WDFN Exposed Pad	80 MHz	512 kb	512 M
GigaDevice Semiconductor (HK) Limited GD5F4GQ6REYJGY	FLASH	600 µs	SPI - Quad I/O	11 ns	8-WSON (6x8)	FLASH - NAND (SLC)	Non-Volatile	105 °C	-40 °C	Surface Mount	1.7 V	2 V	8-WDFN Exposed Pad	80 MHz	512 kb	512 M
GigaDevice Semiconductor (HK) Limited GD5F4GQ6RF9IGY	FLASH		SPI - Quad I/O		8-LGA (6x8)	FLASH - NAND	Non-Volatile	85 °C	-40 °C	Surface Mount	1.7 V	2 V	8-WLGA Exposed Pad	80 MHz	512 kb	512 M

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tray	4800	$ 9.86

Description

General part information

GD5F4GQ6 Series

FLASH - NAND (SLC) Memory IC 4Gbit SPI - Quad I/O, DTR 104 MHz 9 ns 8-WSON (6x8)

Documents

Technical documentation and resources

No documents available