Specification	GD5F4GQ6REY2GY

Access Time	11 ns
Clock Frequency	80 MHz
Memory Depth	1 G
Memory Format	FLASH
Memory Interface (Type)	SPI - Quad I/O, DTR
Memory Size	4 Gbit
Memory Type	Non-Volatile
Memory Width	4 bit
Mounting Type	Surface Mount
Operating Temperature (Max)	105 °C
Operating Temperature (Min)	-40 °C
Package / Case	8-WDFN Exposed Pad
Package Length	6
Package Name	8-WSON
Package Width	8
Technology	FLASH - NAND (SLC)
Voltage - Supply (Maximum)	2 V
Voltage - Supply (Minimum)	1.7 V
Write Cycle Time - Page	600 µs
Write Cycle Time - Word	600 µs

GD5F4GQ6 Series

Part	Memory Width	Memory Depth	Memory Size	Write Cycle Time - Word	Write Cycle Time - Page	Package Width	Package Name	Package Length	Clock Frequency	Package / Case	Voltage - Supply (Maximum)	Voltage - Supply (Minimum)	Access Time	Memory Interface (Type)	Memory Type	Mounting Type	Operating Temperature (Max)	Operating Temperature (Min)	Technology	Memory Format
GigaDevice Semiconductor (HK) Limited GD5F4GQ6UEYIGY	8 bit	512 M	4 Gbit	600 µs	600 µs	8	8-WSON	6	104 MHz	8-WDFN Exposed Pad	3.6 V	2.7 V	9 ns	SPI - Quad I/O	Non-Volatile	Surface Mount	85 °C	-40 °C	FLASH - NAND (SLC)	FLASH
GigaDevice Semiconductor (HK) Limited GD5F4GQ6UEYIGR	8 bit	512 M	4 Gbit	600 µs	600 µs	8	8-WSON	6	104 MHz	8-WDFN Exposed Pad	3.6 V	2.7 V	9 ns	SPI - Quad I/O	Non-Volatile	Surface Mount	85 °C	-40 °C	FLASH - NAND (SLC)	FLASH
GigaDevice Semiconductor (HK) Limited GD5F4GQ6REYIGY	8 bit	512 M	4 Gbit	600 µs	600 µs	8	8-WSON	6	80 MHz	8-WDFN Exposed Pad	2 V	1.7 V	11 ns	SPI - Quad I/O	Non-Volatile	Surface Mount	85 °C	-40 °C	FLASH - NAND (SLC)	FLASH
GigaDevice Semiconductor (HK) Limited GD5F4GQ6REY2GY	4 bit	1 G	4 Gbit	600 µs	600 µs	8	8-WSON	6	80 MHz	8-WDFN Exposed Pad	2 V	1.7 V	11 ns	DTR SPI - Quad I/O	Non-Volatile	Surface Mount	105 °C	-40 °C	FLASH - NAND (SLC)	FLASH
GigaDevice Semiconductor (HK) Limited GD5F4GQ6UEYJGR	8 bit	512 M	4 Gbit	600 µs	600 µs	8	8-WSON	6	104 MHz	8-WDFN Exposed Pad	3.6 V	2.7 V	9 ns	SPI - Quad I/O	Non-Volatile	Surface Mount	105 °C	-40 °C	FLASH - NAND (SLC)	FLASH
GigaDevice Semiconductor (HK) Limited GD5F4GQ6UEY2GY	4 bit	1 G	4 Gbit	600 µs	600 µs	8	8-WSON	6	104 MHz	8-WDFN Exposed Pad	3.6 V	2.7 V	9 ns	DTR SPI - Quad I/O	Non-Volatile	Surface Mount	105 °C	-40 °C	FLASH - NAND (SLC)	FLASH
GigaDevice Semiconductor (HK) Limited GD5F4GQ6REYIGR	8 bit	512 M	4 Gbit	600 µs	600 µs	8	8-WSON	6	80 MHz	8-WDFN Exposed Pad	2 V	1.7 V	11 ns	SPI - Quad I/O	Non-Volatile	Surface Mount	85 °C	-40 °C	FLASH - NAND (SLC)	FLASH
GigaDevice Semiconductor (HK) Limited GD5F4GQ6REYJGY	8 bit	512 M	4 Gbit	600 µs	600 µs	8	8-WSON	6	80 MHz	8-WDFN Exposed Pad	2 V	1.7 V	11 ns	SPI - Quad I/O	Non-Volatile	Surface Mount	105 °C	-40 °C	FLASH - NAND (SLC)	FLASH
GigaDevice Semiconductor (HK) Limited GD5F4GQ6RF9IGY	8 bit	512 M	4 Gbit			8 mm	8-LGA	6 mm	80 MHz	8-WLGA Exposed Pad	2 V	1.7 V		SPI - Quad I/O	Non-Volatile	Surface Mount	85 °C	-40 °C	FLASH - NAND	FLASH

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