
S26HS512TGABHI010
ActiveFLASH MEMORY, 512MBIT, -40 TO 85DEG C ROHS COMPLIANT: YES
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S26HS512TGABHI010
ActiveFLASH MEMORY, 512MBIT, -40 TO 85DEG C ROHS COMPLIANT: YES
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Technical Specifications
Parameters and characteristics for this part
| Specification | S26HS512TGABHI010 |
|---|---|
| Clock Frequency | 200 MHz |
| Memory Format | FLASH |
| Memory Interface | HyperBus |
| Memory Organization | 64 M |
| Memory Size | 64 MB |
| Memory Type | Non-Volatile |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 85 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 24-VBGA |
| Supplier Device Package | 24-FBGA (6x8) |
| Technology | FLASH - NOR |
| Voltage - Supply [Max] | 2 V |
| Voltage - Supply [Min] | 1.7 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
S26HS512 Series
Infineon presents the S26HS512TGABHI010, part of the SEMPER™ NOR Flash Memory family. This product features a massive density of 512 Mbit and an impressive interface bandwidth of 400 MByte/s. Operating on a voltage of 1.8 V, it uses the advanced HYPERBUS™ interface and has an interface frequency of 200 MHz (DDR). Packaged under the Infineon's PG-BGA-24, this superior product is powered by Infineon's proprietary 45-nm MIRRORBIT™ technology.
Documents
Technical documentation and resources