
S26HS512TGABHV013
ActiveNOR FLASH SERIAL-SPI 1.8V 512M-BIT 512M X 1 8NS 24-PIN BGA T/R
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S26HS512TGABHV013
ActiveNOR FLASH SERIAL-SPI 1.8V 512M-BIT 512M X 1 8NS 24-PIN BGA T/R
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Technical Specifications
Parameters and characteristics for this part
| Specification | S26HS512TGABHV013 |
|---|---|
| Access Time | 5.45 ns |
| Clock Frequency | 200 MHz |
| Memory Format | FLASH |
| Memory Interface | HyperBus |
| Memory Organization | 64 M |
| Memory Size | 64 MB |
| Memory Type | Non-Volatile |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 105 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 24-VBGA |
| Supplier Device Package | 24-FBGA (6x8) |
| Technology | FLASH - NOR (SLC) |
| Voltage - Supply [Max] | 2 V |
| Voltage - Supply [Min] | 1.7 V |
| Write Cycle Time - Word, Page | 1.7 ms |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 2500 | $ 10.49 | |
Description
General part information
S26HS512 Series
The S26HS512TGABHV013 belongs to Infineon's SEMPER™ NOR Flash Memory family, offering a density of 512 Mbit and utilizing HYPERBUS™ interface. The interface frequency for DDR is 200 MHz, with an operating voltage of 1.8 V. Superior bandwidth of 400 MByte/s ensures faster data transfer. It features Infineon's 45-nm MIRRORBIT™ technology that allows storing two data bits per memory array cell. The product is housed in Infineon's PG-BGA-24 package.
Documents
Technical documentation and resources