VN2222LL-G-P013
ActiveMOSFET, N-CHANNEL ENHANCEMENT-MODE, 60V, 7.5 OHM
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VN2222LL-G-P013
ActiveMOSFET, N-CHANNEL ENHANCEMENT-MODE, 60V, 7.5 OHM
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Technical Specifications
Parameters and characteristics commom to parts in this series
| Specification | VN2222LL-G-P013 | VN2222 Series |
|---|---|---|
| - | - | |
| Current - Continuous Drain (Id) @ 25°C | 230 mA | 230 mA |
| Drain to Source Voltage (Vdss) | 60 V | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) [Max] | 10 V | 10 V |
| Drive Voltage (Max Rds On, Min Rds On) [Min] | 5 V | 5 V |
| FET Type | N-Channel | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 60 pF | 60 pF |
| Mounting Type | Through Hole | Through Hole |
| Operating Temperature [Max] | 150 °C | 150 °C |
| Operating Temperature [Min] | -55 °C | -55 °C |
| Package / Case | TO-226-3, TO-92-3 | TO-226-3, TO-92-3 |
| Power Dissipation (Max) | 400 mW, 1 W | 1 - 400 mW |
| Rds On (Max) @ Id, Vgs | 7.5 Ohm | 7.5 Ohm |
| Supplier Device Package | TO-92-3 | TO-92-3 |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V | 30 V |
| Vgs(th) (Max) @ Id [Max] | 2.5 V | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 0.64 | |
| 25 | $ 0.54 | |||
| 100 | $ 0.49 | |||
| Tape & Box (TB) | 2000 | $ 0.49 | ||
| Microchip Direct | AMMO | 1 | $ 0.64 | |
| 25 | $ 0.54 | |||
| 100 | $ 0.49 | |||
| 1000 | $ 0.41 | |||
| 5000 | $ 0.37 | |||
| 10000 | $ 0.35 | |||
VN2222 Series
MOSFET, N-Channel Enhancement-Mode, 60V, 7.5 Ohm
| Part | Package / Case | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | FET Type | Technology | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Vgs (Max) | Vgs(th) (Max) @ Id [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microchip Technology VN2222LL-G-P003 | TO-226-3, TO-92-3 | 230 mA | 7.5 Ohm | TO-92-3 | -55 °C | 150 °C | 60 pF | Through Hole | N-Channel | MOSFET (Metal Oxide) | 1 W, 400 mW | 60 V | 10 V | 5 V | 30 V | 2.5 V |
Microchip Technology VN2222LL-G | TO-226-3, TO-92-3 | 230 mA | 7.5 Ohm | TO-92-3 | -55 °C | 150 °C | 60 pF | Through Hole | N-Channel | MOSFET (Metal Oxide) | 1 W, 400 mW | 60 V | 10 V | 5 V | 30 V | 2.5 V |
Microchip Technology VN2222LL-G-P013 | TO-226-3, TO-92-3 | 230 mA | 7.5 Ohm | TO-92-3 | -55 °C | 150 °C | 60 pF | Through Hole | N-Channel | MOSFET (Metal Oxide) | 1 W, 400 mW | 60 V | 10 V | 5 V | 30 V | 2.5 V |
Microchip Technology VN2222LL-G-P003 | ||||||||||||||||
Microchip Technology VN2222LL-G-P003 |
Description
General part information
VN2222 Series
This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.
Documents
Technical documentation and resources