VN2222 Series

MOSFET, N-Channel Enhancement-Mode, 60V, 7.5 Ohm

Catalog

MOSFET, N-Channel Enhancement-Mode, 60V, 7.5 Ohm

Part	Package / Case	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	FET Type	Technology	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Vgs (Max)	Vgs(th) (Max) @ Id [Max]
Microchip Technology VN2222LL-G-P003	TO-226-3, TO-92-3	230 mA	7.5 Ohm	TO-92-3	-55 °C	150 °C	60 pF	Through Hole	N-Channel	MOSFET (Metal Oxide)	1 W, 400 mW	60 V	10 V	5 V	30 V	2.5 V
Microchip Technology VN2222LL-G	TO-226-3, TO-92-3	230 mA	7.5 Ohm	TO-92-3	-55 °C	150 °C	60 pF	Through Hole	N-Channel	MOSFET (Metal Oxide)	1 W, 400 mW	60 V	10 V	5 V	30 V	2.5 V
Microchip Technology VN2222LL-G-P013	TO-226-3, TO-92-3	230 mA	7.5 Ohm	TO-92-3	-55 °C	150 °C	60 pF	Through Hole	N-Channel	MOSFET (Metal Oxide)	1 W, 400 mW	60 V	10 V	5 V	30 V	2.5 V
Microchip Technology VN2222LL-G-P003
Microchip Technology VN2222LL-G-P003

Catalog

MOSFET, N-Channel Enhancement-Mode, 60V, 7.5 Ohm

Key Features

• + Free from secondary breakdown

• + Low power drive requirement

• + Ease of paralleling

• + Low CISS and fast switching speeds

• + Excellent thermal stability

• + Integral source-drain diode

• + High input impedance and high gain

Description

This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.