SSM3J14TTE85LF

Obsolete

Toshiba Semiconductor and Storage

MOSFET P-CH 30V 2.7A TSM

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Obsolete

Toshiba Semiconductor and Storage

MOSFET P-CH 30V 2.7A TSM

Technical Specifications

Parameters and characteristics for this part

Specification	SSM3J14TTE85LF

Current - Continuous Drain (Id) @ 25°C	2.7 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	413 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	700 mW
Rds On (Max) @ Id, Vgs	85 mOhm
Supplier Device Package	TSM
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Drain to Source Voltage (Vdss)	FET Type	Operating Temperature	Supplier Device Package	Mounting Type	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Technology
Toshiba Semiconductor and Storage SSM3J14TTE85LF	85 mOhm	700 mW	2.7 A	20 V	30 V	P-Channel	150 °C	TSM	Surface Mount	4 V	10 V	SC-59 SOT-23-3 TO-236-3	413 pF	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 30 V 2.7A (Ta) 700mW (Ta) Surface Mount TSM

Technical documentation and resources

No documents available