MOSFET P-CH 30V 2.7A TSM
| Part | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Drain to Source Voltage (Vdss) | FET Type | Operating Temperature | Supplier Device Package | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Package / Case | Input Capacitance (Ciss) (Max) @ Vds | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 85 mOhm | 700 mW | 2.7 A | 20 V | 30 V | P-Channel | 150 °C | TSM | Surface Mount | 4 V | 10 V | SC-59 SOT-23-3 TO-236-3 | 413 pF | MOSFET (Metal Oxide) |