Specification	RN1903FE,LF(CT

Current - Collector (Ic) (Max)	0.1 mA
Current - Collector Cutoff (Max)	500 nA
DC Current Gain (hFE) (Min)	70
Frequency - Transition	250 MHz
Mounting Type	Surface Mount
NPN Count	2
Package / Case	SOT-563, SOT-666
Package Name	ES6
Power - Max	100 mW
Resistor - Base (R1) Resistance	22 kOhm
Resistor - Emitter Base (R2)	22 kOhms
Transistor Configuration	Dual, Pre-Biased
Transistor Type	NPN
Vce Saturation (Max)	300 mV
Voltage - Collector Emitter Breakdown (Max)	50 V

RN1903 Series

Bipolar Transistors, NPN x 2 Bias Resistor Built-in Transistors (BRT), 22 kΩ/22 kΩ, SOT-363(US6)

Part	Resistor - Base (R1) Resistance	Vce Saturation (Max)	Resistor - Emitter Base (R2)	Mounting Type	Frequency - Transition	DC Current Gain (hFE) (Min)	Power - Max	Current - Collector Cutoff (Max)	Package Name	Current - Collector (Ic) (Max)	NPN Count	Transistor Type	Transistor Configuration	Package / Case	Voltage - Collector Emitter Breakdown (Max)	Grade	Qualification
Toshiba Semiconductor and Storage RN1903,LF(CT	22 kOhm	300 mV	22 kOhms	Surface Mount	250 MHz	70	200 mW	100 nA	US6	0.1 mA	2	NPN	Dual Pre-Biased	6-TSSOP SC-88 SOT-363	50 V
Toshiba Semiconductor and Storage RN1903FE,LF(CT	22 kOhm	300 mV	22 kOhms	Surface Mount	250 MHz	70	100 mW	500 nA	ES6	0.1 mA	2	NPN	Dual Pre-Biased	SOT-563 SOT-666	50 V
Toshiba Semiconductor and Storage RN1903,LXHF(CT	22 kOhm	300 mV	22 kOhms	Surface Mount	250 MHz	70	200 mW	500 nA	US6	0.1 mA	2	NPN	Dual Pre-Biased	6-TSSOP SC-88 SOT-363	50 V	Automotive	AEC-Q101

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Create a free account to access distributor pricing data.

3D models and CAD resources for this part

Technical documentation and resources

No documents available