RN1903 Series

Catalog

TRANS 2NPN PREBIAS 0.2W US6

Part	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]	Resistor - Emitter Base (R2)	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	Resistor - Base (R1)	Package / Case	Power - Max [Max]	Transistor Type	Current - Collector Cutoff (Max) [Max]	Frequency - Transition	Mounting Type	Supplier Device Package	Qualification	Grade
Toshiba Semiconductor and Storage RN1903,LF(CT	300 mV	100 mA	22 kOhms	70	50 V	22 kOhms	6-TSSOP SC-88 SOT-363	200 mW	2 NPN - Pre-Biased (Dual)	100 nA	250 MHz	Surface Mount	US6
Toshiba Semiconductor and Storage RN1903FE,LF(CT	300 mV	100 mA	22 kOhms	70	50 V	22 kOhms	SOT-563 SOT-666	100 mW	2 NPN - Pre-Biased (Dual)	500 nA	250 MHz	Surface Mount	ES6
Toshiba Semiconductor and Storage RN1903,LXHF(CT	300 mV	100 mA	22 kOhms	70	50 V	22 kOhms	6-TSSOP SC-88 SOT-363	200 mW	2 NPN - Pre-Biased (Dual)	500 nA	250 MHz	Surface Mount	US6	AEC-Q101	Automotive