IRF7580MTRPBF

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Infineon Technologies

STRONGIRFET™ N-CHANNEL POWER MOSFET ; DIRECTFET™ M PACKAGE; 3.6 MOHM;

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Infineon Technologies

STRONGIRFET™ N-CHANNEL POWER MOSFET ; DIRECTFET™ M PACKAGE; 3.6 MOHM;

Technical Specifications

Parameters and characteristics for this part

Specification	IRF7580MTRPBF

Current - Continuous Drain (Id) @ 25°C	114 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	180 nC
Input Capacitance (Ciss) (Max) @ Vds	6510 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	DirectFET™ Isometric ME
Power Dissipation (Max)	115 W
Rds On (Max) @ Id, Vgs	3.6 mOhm
Supplier Device Package	DirectFET™ Isometric ME
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.7 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Supplier Device Package	Rds On (Max) @ Id, Vgs	FET Type	Vgs (Max)	Power Dissipation (Max)	Mounting Type	Technology	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs
Infineon Technologies IRF7580MTRPBF	6 V 10 V	114 A	-55 °C	175 ░C	3.7 V	6510 pF	DirectFET™ Isometric ME	DirectFET™ Isometric ME	3.6 mOhm	N-Channel	20 V	115 W	Surface Mount	MOSFET (Metal Oxide)	60 V	180 nC
Infineon Technologies IRF7580MTRPBF	6 V 10 V	114 A	-55 °C	175 ░C	3.7 V	6510 pF	DirectFET™ Isometric ME	DirectFET™ Isometric ME	3.6 mOhm	N-Channel	20 V	115 W	Surface Mount	MOSFET (Metal Oxide)	60 V	180 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 60 V 114A (Tc) 115W (Tc) Surface Mount DirectFET™ Isometric ME

Technical documentation and resources