Beta
⌘K
STRONGIRFET™ N-CHANNEL POWER MOSFET ; DIRECTFET™ M PACKAGE; 3.6 MOHM;
| Part | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Supplier Device Package | Rds On (Max) @ Id, Vgs | FET Type | Vgs (Max) | Power Dissipation (Max) | Mounting Type | Technology | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 6 V 10 V | 114 A | -55 °C | 175 ░C | 3.7 V | 6510 pF | DirectFET™ Isometric ME | DirectFET™ Isometric ME | 3.6 mOhm | N-Channel | 20 V | 115 W | Surface Mount | MOSFET (Metal Oxide) | 60 V | 180 nC |
Infineon Technologies | 6 V 10 V | 114 A | -55 °C | 175 ░C | 3.7 V | 6510 pF | DirectFET™ Isometric ME | DirectFET™ Isometric ME | 3.6 mOhm | N-Channel | 20 V | 115 W | Surface Mount | MOSFET (Metal Oxide) | 60 V | 180 nC |