STPSC6TH13TI
ActiveSILICON CARBIDE SCHOTTKY DIODE, DUAL SERIES, 650 V, 6 A, 18 NC, TO-220AB
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STPSC6TH13TI
ActiveSILICON CARBIDE SCHOTTKY DIODE, DUAL SERIES, 650 V, 6 A, 18 NC, TO-220AB
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Technical Specifications
Parameters and characteristics for this part
| Specification | STPSC6TH13TI |
|---|---|
| Current - Average Rectified (Io) (per Diode) | 6 A |
| Current - Reverse Leakage @ Vr | 60 µA |
| Diode Configuration | 1 Pair Series Connection |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -40 °C |
| Package / Case | TO-220-3 |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | No Recovery Time |
| Supplier Device Package | TO-220AB Insulated |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.75 V |
Pricing
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Description
General part information
STPSC6H065BY-TR Series
This 6 A, 650 V SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
This STPSC6H065 is especially suited for use in PFC applications. This ST SiC diode will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.
Documents
Technical documentation and resources