STPSC6H12B-TR1

Obsolete

STMicroelectronics

DIODE SCHOTTKY 1.2KV 6A 3-PIN(2+TAB) DPAK-HV T/R

STPSC6H12B-TR1

Obsolete

STMicroelectronics

DIODE SCHOTTKY 1.2KV 6A 3-PIN(2+TAB) DPAK-HV T/R

Description Specifications Series Pricing CAD Documents

Description

General part information

STPSC6 Series

This 6 A, 650 V SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

This STPSC6H065 is especially suited for use in PFC applications. This ST SiC diode will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.

Technical Specifications

Parameters and characteristics for this part

Specification	STPSC6H12B-TR1

Capacitance	330 pF
Current - Average Rectified (Io)	6 A
Current - Reverse Leakage	400 µA
Mounting Type	Surface Mount
Operating Temperature - Junction (Max)	175 °C
Operating Temperature - Junction (Min)	-40 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Package Name	DPak
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Speed - Fast Recovery (Minimum)	500 mA
Speed - Recovery Current	500 mA, 500 mA
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)	1200 V
Voltage - Forward (Vf) (Max)	1.9 V

STPSC6 Series

Automotive 650 V, 6 A High Surge Silicon Carbide Power Schottky Diode

Part	Operating Temperature - Junction (Max)	Operating Temperature - Junction (Min)	Current - Average Rectified (Io) (per Diode)	Package Name	Current - Reverse Leakage	Diode Pair Count	Diode Configuration	Voltage - Forward (Vf) (Max)	Voltage - DC Reverse (Vr) (Max)	Technology	Mounting Type	Speed - Fast Recovery (Minimum)	Speed	Speed - Recovery Current	Package / Case	Qualification	Current - Average Rectified (Io)	Grade	Capacitance
STMicroelectronics STPSC6TH13TI	175 °C	-40 °C	6 A	TO-220AB Insulated	60 µA	1 pair	Series Connection	1.75 V	650 V	SiC (Silicon Carbide) Schottky	Through Hole	500 mA	No Recovery Time	500 mA 500 mA	TO-220-3
STMicroelectronics STPSC6H065BY-TR	175 °C	-40 °C		DPak	60 µA				650 V	SiC (Silicon Carbide) Schottky	Surface Mount	500 mA	No Recovery Time	500 mA 500 mA	DPAK (2 Leads + Tab) SC-63 TO-252-3	AEC-Q101	6 A	Automotive	300 pF
STMicroelectronics STPSC6H065B-TR	175 °C	-40 °C		DPak	60 µA			1.75 V	650 V	SiC (Silicon Carbide) Schottky	Surface Mount	500 mA	No Recovery Time	500 mA 500 mA	DPAK (2 Leads + Tab) SC-63 TO-252-3		6 A		300 pF
STMicroelectronics STPSC6H065G-TR	175 °C	-40 °C		D2PAK	60 µA			1.75 V	650 V	SiC (Silicon Carbide) Schottky	Surface Mount	500 mA	No Recovery Time	500 mA 500 mA	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB		6 A		300 pF
STMicroelectronics STPSC6H12B-TR1	175 °C	-40 °C		DPak	400 µA			1.9 V	1200 V	SiC (Silicon Carbide) Schottky	Surface Mount	500 mA	No Recovery Time	500 mA 500 mA	DPAK (2 Leads + Tab) SC-63 TO-252-3		6 A		330 pF

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

STPSC6H12B-TR1 | Datasheet

Technical Data Sheet EN

Product Change Notice EN

Technical Data Sheet EN