
BSZ22DN20NS3GATMA1
ActiveInfineon Technologies
OPTIMOS™ 3 N-CHANNEL POWER MOSFET 200 V ; PQFN 3.3 X 3.3 PACKAGE; 225 MOHM;
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BSZ22DN20NS3GATMA1
ActiveInfineon Technologies
OPTIMOS™ 3 N-CHANNEL POWER MOSFET 200 V ; PQFN 3.3 X 3.3 PACKAGE; 225 MOHM;
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | BSZ22DN20NS3GATMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 7 A |
| Drain to Source Voltage (Vdss) | 200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 5.6 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 430 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerTDFN |
| Power Dissipation (Max) | 34 W |
| Rds On (Max) @ Id, Vgs | 225 mOhm |
| Supplier Device Package | PG-TSDSON-8 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
BSZ22DN20 Series
Infineon's 200 V OptiMOS™ products are performance leading benchmark technologies, perfectly suited for synchronous rectification in 48 V systems, DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives.
Documents
Technical documentation and resources