Beta
⌘K
OPTIMOS™ 3 N-CHANNEL POWER MOSFET 200 V ; PQFN 3.3 X 3.3 PACKAGE; 225 MOHM;
| Part | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs [Max] | Technology | Vgs (Max) | Supplier Device Package | Package / Case | Rds On (Max) @ Id, Vgs | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id | Power Dissipation (Max) | Operating Temperature [Min] | Operating Temperature [Max] | FET Type | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 10 V | 5.6 nC | MOSFET (Metal Oxide) | 20 V | PG-TSDSON-8 | 8-PowerTDFN | 225 mOhm | Surface Mount | 7 A | 430 pF | 4 V | 34 W | -55 °C | 150 °C | N-Channel | 200 V |