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CSD16340Q3T

Active
Texas Instruments

25-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 3 MM X 3 MM, 5.5 MOHM

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CSD16340Q3T - https://ti.com/content/dam/ticom/images/products/package/d/dqg0008a.png

CSD16340Q3T

Active
Texas Instruments

25-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 3 MM X 3 MM, 5.5 MOHM

Technical Specifications

Parameters and characteristics for this part

SpecificationCSD16340Q3T
Current - Continuous Drain (Id) @ 25°C60 A
Drain to Source Voltage (Vdss)25 V
Drive Voltage (Max Rds On, Min Rds On)8 V, 2.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs9.2 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]1350 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power Dissipation (Max) [Max]3 W
Rds On (Max) @ Id, Vgs4.5 mOhm
Supplier Device Package8-VSON-CLIP (3.3x3.3)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)10 V, -8 V
Vgs(th) (Max) @ Id1.1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.43
10$ 1.17
100$ 0.91
Digi-Reel® 1$ 1.43
10$ 1.17
100$ 0.91
Tape & Reel (TR) 250$ 0.61
500$ 0.52
1250$ 0.52
Texas InstrumentsSMALL T&R 1$ 1.06
100$ 0.81
250$ 0.60
1000$ 0.43

CSD16340Q3 Series

25-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 5.5 mOhm

PartGate Charge (Qg) (Max) @ VgsPackage / CaseVgs(th) (Max) @ IdOperating Temperature [Max]Operating Temperature [Min]Drive Voltage (Max Rds On, Min Rds On)Drain to Source Voltage (Vdss)Vgs (Max)Input Capacitance (Ciss) (Max) @ Vds [Max]Supplier Device PackageMounting TypeFET TypePower Dissipation (Max) [Max]Rds On (Max) @ Id, VgsTechnologyCurrent - Continuous Drain (Id) @ 25°C
Texas Instruments
CSD16340Q3T
9.2 nC
8-PowerTDFN
1.1 V
150 °C
-55 °C
2.5 V, 8 V
25 V
-8 V, 10 V
1350 pF
8-VSON-CLIP (3.3x3.3)
Surface Mount
N-Channel
3 W
4.5 mOhm
MOSFET (Metal Oxide)
60 A

Description

General part information

CSD16340Q3 Series

This 25 V, 3.8 mΩ, 3.3 × 3.3 mm SON NexFET™ power MOSFET is designed to minimize losses in power conversion and optimized for 5 V gate drive applications.

This 25 V, 3.8 mΩ, 3.3 × 3.3 mm SON NexFET™ power MOSFET is designed to minimize losses in power conversion and optimized for 5 V gate drive applications.