CSD16340Q3 Series
25-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 5.5 mOhm
Manufacturer: Texas Instruments
Link to Manufacturer Page: https://www.ti.com/
Catalog
25-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 5.5 mOhm
| Part | Gate Charge (Qg) (Max) @ Vgs | Package / Case | Vgs(th) (Max) @ Id | Operating Temperature [Max] | Operating Temperature [Min] | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Supplier Device Package | Mounting Type | FET Type | Power Dissipation (Max) [Max] | Rds On (Max) @ Id, Vgs | Technology | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Texas Instruments CSD16340Q3T | 9.2 nC | 8-PowerTDFN | 1.1 V | 150 °C | -55 °C | 2.5 V, 8 V | 25 V | -8 V, 10 V | 1350 pF | 8-VSON-CLIP (3.3x3.3) | Surface Mount | N-Channel | 3 W | 4.5 mOhm | MOSFET (Metal Oxide) | 60 A |
Key Features
• Optimized for 5 V Gate DriveResistance Rated at VGS=2.5 VUltra-Low Qgand QgdLow Thermal ResistanceAvalanche RatedPb Free Terminal PlatingRoHS CompliantHalogen FreeSON 3.3-mm × 3.3-mm PlasticPackageAPPLICATIONSPoint of Load SynchronousBuck Converter for Applicationsin Networking, Telecom, andComputing SystemsOptimized for Controlor Synchronous FETApplicationsOptimized for 5 V Gate DriveResistance Rated at VGS=2.5 VUltra-Low Qgand QgdLow Thermal ResistanceAvalanche RatedPb Free Terminal PlatingRoHS CompliantHalogen FreeSON 3.3-mm × 3.3-mm PlasticPackageAPPLICATIONSPoint of Load SynchronousBuck Converter for Applicationsin Networking, Telecom, andComputing SystemsOptimized for Controlor Synchronous FETApplications
Description
AI
This 25 V, 3.8 mΩ, 3.3 × 3.3 mm SON NexFET™ power MOSFET is designed to minimize losses in power conversion and optimized for 5 V gate drive applications.
This 25 V, 3.8 mΩ, 3.3 × 3.3 mm SON NexFET™ power MOSFET is designed to minimize losses in power conversion and optimized for 5 V gate drive applications.