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STW10NK60Z - ONSEMI HUF75652G3

STW10NK60Z

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STMicroelectronics

N-CHANNEL 600 V, 0.65 OHM TYP., 10 A ZENER-PROTECTED SUPERMESH POWER MOSFET IN TO-247 PACKAGE

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STW10NK60Z - ONSEMI HUF75652G3

STW10NK60Z

Active
STMicroelectronics

N-CHANNEL 600 V, 0.65 OHM TYP., 10 A ZENER-PROTECTED SUPERMESH POWER MOSFET IN TO-247 PACKAGE

Deep-Dive with AI

DocumentsDatasheet+18

Technical Specifications

Parameters and characteristics commom to parts in this series

SpecificationSTW10NK60ZSTW10 Series
Current - Continuous Drain (Id) @ 25°C10 A9 - 10 A
Drain to Source Voltage (Vdss)600 V600 - 800 V
Drive Voltage (Max Rds On, Min Rds On)10 V10 V
FET TypeN-ChannelN-Channel
Gate Charge (Qg) (Max) @ Vgs-72 nC
Gate Charge (Qg) (Max) @ Vgs [Max]70 nC70 nC
Input Capacitance (Ciss) (Max) @ Vds1370 pF1370 - 2180 pF
Mounting TypeThrough HoleThrough Hole
Operating Temperature [Max]150 °C150 °C
Operating Temperature [Min]-55 °C-55 °C
Package / CaseTO-247-3TO-247-3
Power Dissipation (Max)156 W156 W
Rds On (Max) @ Id, Vgs750 mOhm750 - 900 mOhm
Supplier Device PackageTO-247-3TO-247-3
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)
Vgs (Max)30 V30 V
Vgs(th) (Max) @ Id4.5 V4.5 V

STW10 Series

N-channel 800 V, 0.78 Ohm, 9 A Zener-protected SuperMESH(TM) Power MOSFETs in TO-247 package

PartGate Charge (Qg) (Max) @ VgsDrive Voltage (Max Rds On, Min Rds On)Mounting TypeDrain to Source Voltage (Vdss)Package / CaseSupplier Device PackageFET TypeOperating Temperature [Min]Operating Temperature [Max]Current - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsTechnologyRds On (Max) @ Id, VgsVgs (Max)Power Dissipation (Max)Gate Charge (Qg) (Max) @ Vgs [Max]
STMicroelectronics
STW10NK80Z
72 nC
10 V
Through Hole
800 V
TO-247-3
TO-247-3
N-Channel
-55 °C
150 °C
9 A
4.5 V
2180 pF
MOSFET (Metal Oxide)
900 mOhm
30 V
STMicroelectronics
STW10NK60Z
10 V
Through Hole
600 V
TO-247-3
TO-247-3
N-Channel
-55 °C
150 °C
10 A
4.5 V
1370 pF
MOSFET (Metal Oxide)
750 mOhm
30 V
156 W
70 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 4.07
30$ 3.22
120$ 2.76
510$ 2.46
1020$ 2.10
2010$ 1.98
5010$ 1.90
NewarkEach 1$ 4.30
10$ 3.65
120$ 2.95
510$ 2.70
1020$ 2.41
2520$ 2.00

Description

General part information

STW10 Series

These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.