IPD050N10N5ATMA1
ActiveOPTIMOS™ 5 N-CHANNEL POWER MOSFET 100 V ; DPAK TO-252 PACKAGE; 5 MOHM;
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IPD050N10N5ATMA1
ActiveOPTIMOS™ 5 N-CHANNEL POWER MOSFET 100 V ; DPAK TO-252 PACKAGE; 5 MOHM;
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Technical Specifications
Parameters and characteristics for this part
| Specification | IPD050N10N5ATMA1 |
|---|---|
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6 V, 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 64 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 4700 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Power Dissipation (Max) | 150 W |
| Rds On (Max) @ Id, Vgs | 5 mOhm |
| Supplier Device Package | PG-TO252-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IPD050 Series
OptiMOS™ 5 100Vpower MOSFET IPD050N10N5 from Infineon is especially designed for synchronous rectification intelecomblocks including Or-ing, hotswap and battery protection as well as forserver power supplyapplications. The device has a lower RDS(on)of 22% compared to similar devices, one of the biggest contributors to this industry leading FOM is the low on-state resistance providing the highest level of power density and efficiency.
Documents
Technical documentation and resources