POWER MOSFET, N CHANNEL, 30 V, 50 A, 0.0042 OHM, TO-252 (DPAK), SURFACE MOUNT
| Part | Vgs(th) (Max) @ Id [Max] | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Power Dissipation (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Technology | FET Type | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 2.2 V | 30 V | 50 A | PG-TO252-3-11 | 5 mOhm | 31 nC | 20 V | 68 W | -55 °C | 175 ░C | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 4.5 V 10 V | 3200 pF | Surface Mount | MOSFET (Metal Oxide) | N-Channel | |
Infineon Technologies | 100 V | PG-TO252-3 | 5 mOhm | 20 V | 150 W | -55 °C | 175 ░C | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 6 V 10 V | 4700 pF | Surface Mount | MOSFET (Metal Oxide) | N-Channel | 64 nC |