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STP100N6F7 - MULTICOMP PRO MUR1660CT

STP100N6F7

Active
STMicroelectronics

N-CHANNEL 60 V, 4.7 MOHM TYP., 100 A STRIPFET F7 POWER MOSFET IN A TO-220 PACKAGE

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Search across all available documentation for this part.

DocumentsProduct Change Notice ENTechnical Data Sheet EN+17
STP100N6F7 - MULTICOMP PRO MUR1660CT

STP100N6F7

Active
STMicroelectronics

N-CHANNEL 60 V, 4.7 MOHM TYP., 100 A STRIPFET F7 POWER MOSFET IN A TO-220 PACKAGE

Deep-Dive with AI

DocumentsProduct Change Notice ENTechnical Data Sheet EN+17

Technical Specifications

Parameters and characteristics for this part

SpecificationSTP100N6F7
Current - Continuous Drain (Id) @ 25°C100 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs30 nC
Input Capacitance (Ciss) (Max) @ Vds1980 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max)125 W
Rds On (Max) @ Id, Vgs [Max]5.6 mOhm
Supplier Device PackageTO-220
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 1.58
50$ 1.26
100$ 1.00
500$ 0.85
1000$ 0.69
2000$ 0.65
5000$ 0.62
10000$ 0.59
NewarkEach 1$ 2.36
10$ 1.33
100$ 1.31
500$ 1.11
1000$ 1.05
3000$ 1.00
10000$ 0.93

Description

General part information

STP100N6F7 Series

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.