STP100N6F7 Series

N-channel 60 V, 4.7 mOhm typ., 100 A STripFET F7 Power MOSFET in a TO-220 package

Catalog

N-channel 60 V, 4.7 mOhm typ., 100 A STripFET F7 Power MOSFET in a TO-220 package

Part	Supplier Device Package	FET Type	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Drain to Source Voltage (Vdss)	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Power Dissipation (Max)	Technology	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id
STMicroelectronics STP100N6F7	TO-220	N-Channel	5.6 mOhm	30 nC	-55 °C	175 ░C	10 V	Through Hole	60 V	20 V	1980 pF	TO-220-3	125 W	MOSFET (Metal Oxide)	100 A	4 V

Catalog

N-channel 60 V, 4.7 mOhm typ., 100 A STripFET F7 Power MOSFET in a TO-220 package

Description

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.