BSC072N03LDGATMA1

Obsolete

Infineon Technologies

MOSFET 2N-CH 30V 11.5A 8TDSON

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Obsolete

Infineon Technologies

MOSFET 2N-CH 30V 11.5A 8TDSON

Technical Specifications

Parameters and characteristics for this part

Specification	BSC072N03LDGATMA1

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	11.5 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	41 nC
Input Capacitance (Ciss) (Max) @ Vds	3500 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power - Max [Max]	57 W
Rds On (Max) @ Id, Vgs [Max]	7.2 mOhm
Supplier Device Package	PG-TDSON-8-4
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id [Max]	2.2 V

Part	Vgs(th) (Max) @ Id [Max]	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs [Max]	Supplier Device Package	Package / Case	Drain to Source Voltage (Vdss)	Power - Max [Max]	Input Capacitance (Ciss) (Max) @ Vds	Configuration	FET Feature	Mounting Type	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs
Infineon Technologies BSC072N03LDGATMA1	2.2 V	11.5 A	7.2 mOhm	PG-TDSON-8-4	8-PowerVDFN	30 V	57 W	3500 pF	2 N-Channel (Dual)	Logic Level Gate	Surface Mount	MOSFET (Metal Oxide)	-55 °C	150 °C	41 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 30V 11.5A 57W Surface Mount PG-TDSON-8-4

Technical documentation and resources