MOSFET 2N-CH 30V 11.5A 8TDSON
| Part | Vgs(th) (Max) @ Id [Max] | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs [Max] | Supplier Device Package | Package / Case | Drain to Source Voltage (Vdss) | Power - Max [Max] | Input Capacitance (Ciss) (Max) @ Vds | Configuration | FET Feature | Mounting Type | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 2.2 V | 11.5 A | 7.2 mOhm | PG-TDSON-8-4 | 8-PowerVDFN | 30 V | 57 W | 3500 pF | 2 N-Channel (Dual) | Logic Level Gate | Surface Mount | MOSFET (Metal Oxide) | -55 °C | 150 °C | 41 nC |