STW12NK80Z
ActiveN-CHANNEL 800 V, 0.65 OHM, 10.5 A ZENER PROTECTED SUPERMESH(TM) POWER MOSFET IN TO-247 PACKAGE
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STW12NK80Z
ActiveN-CHANNEL 800 V, 0.65 OHM, 10.5 A ZENER PROTECTED SUPERMESH(TM) POWER MOSFET IN TO-247 PACKAGE
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Technical Specifications
Parameters and characteristics for this part
| Specification | STW12NK80Z |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 10.5 A |
| Drain to Source Voltage (Vdss) | 800 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 87 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 2620 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) [Max] | 190 W |
| Rds On (Max) @ Id, Vgs | 750 mOhm |
| Supplier Device Package | TO-247-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STW12NK80Z Series
This device is made using the SuperMESH™ Power MOSFET technology that is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
Documents
Technical documentation and resources