STW12NK80Z Series

N-channel 800 V, 0.65 Ohm, 10.5 A Zener protected SuperMESH(TM) Power MOSFET in TO-247 package

Catalog

N-channel 800 V, 0.65 Ohm, 10.5 A Zener protected SuperMESH(TM) Power MOSFET in TO-247 package

Part	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	FET Type	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Technology	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]
STMicroelectronics STW12NK90Z	4.5 V	880 mOhm	N-Channel	TO-247-3	10 V	900 V	11 A	3500 pF	30 V	230 W	-55 °C	150 °C	TO-247-3	152 nC	MOSFET (Metal Oxide)	Through Hole
STMicroelectronics STW12NK80Z	4.5 V	750 mOhm	N-Channel	TO-247-3	10 V	800 V	10.5 A	2620 pF	30 V	190 W	-55 °C	150 °C	TO-247-3		MOSFET (Metal Oxide)	Through Hole	87 nC

Catalog

N-channel 800 V, 0.65 Ohm, 10.5 A Zener protected SuperMESH(TM) Power MOSFET in TO-247 package

Description

This device is made using the SuperMESH™ Power MOSFET technology that is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.