IDH20G65C5XKSA1

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Infineon Technologies

DIODE SIL CARB 650V 20A TO220-2

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Infineon Technologies

DIODE SIL CARB 650V 20A TO220-2

Technical Specifications

Parameters and characteristics for this part

Specification	IDH20G65C5XKSA1

Capacitance @ Vr, F	590 pF
Current - Reverse Leakage @ Vr	700 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	PG-TO220-2-2
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Package / Case	Speed	Technology	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Supplier Device Package	Reverse Recovery Time (trr)	Capacitance @ Vr, F	Mounting Type
Infineon Technologies IDH20G65C5XKSA1	TO-220-2	No Recovery Time	SiC (Silicon Carbide) Schottky	175 ░C	-55 C	1.7 V	650 V	700 µA	PG-TO220-2-2	0 ns	590 pF	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 650 V 20A Through Hole PG-TO220-2-2

Technical documentation and resources