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DIODE SIL CARB 650V 20A TO220-2
| Part | Package / Case | Speed | Technology | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Voltage - Forward (Vf) (Max) @ If | Voltage - DC Reverse (Vr) (Max) [Max] | Current - Reverse Leakage @ Vr | Supplier Device Package | Reverse Recovery Time (trr) | Capacitance @ Vr, F | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | TO-220-2 | No Recovery Time | SiC (Silicon Carbide) Schottky | 175 ░C | -55 C | 1.7 V | 650 V | 700 µA | PG-TO220-2-2 | 0 ns | 590 pF | Through Hole |