IR2104STRPBF

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Infineon Technologies

MOSFET DRIVER, HALF BRIDGE, 10V-20V SUPPLY, 360 MA OUTPUT, SOIC-8

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DocumentsTechnical Data Sheet EN Datasheet

IR2104STRPBF

Active

Infineon Technologies

MOSFET DRIVER, HALF BRIDGE, 10V-20V SUPPLY, 360 MA OUTPUT, SOIC-8

Deep-Dive with AI

DocumentsTechnical Data Sheet EN Datasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IR2104STRPBF

Channel Type	Synchronous
Current - Peak Output (Source, Sink) [custom]	360 mA
Current - Peak Output (Source, Sink) [custom]	210 mA
Driven Configuration	Half-Bridge
Gate Type	N-Channel MOSFET, IGBT
High Side Voltage - Max (Bootstrap) [Max]	600 V
Input Type	Non-Inverting
Logic Voltage - VIL, VIH	0.8 V, 3 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Rise / Fall Time (Typ) [custom]	50 ns
Rise / Fall Time (Typ) [custom]	100 ns
Supplier Device Package	8-SOIC
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	10 VDC

IR2104 Series

Part	Voltage - Supply [Max]	Voltage - Supply [Min]	Driven Configuration	Channel Type	High Side Voltage - Max (Bootstrap) [Max]	Package / Case	Package / Case [y]	Package / Case [x]	Gate Type	Number of Drivers	Operating Temperature [Max]	Operating Temperature [Min]	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Logic Voltage - VIL, VIH	Mounting Type	Input Type	Supplier Device Package	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]
Infineon Technologies IR2104S	20 V	10 VDC	Half-Bridge	Synchronous	600 V	8-SOIC	3.9 mm	0.154 in	IGBT N-Channel MOSFET	2	150 °C	-40 °C	50 ns	100 ns	0.8 V 3 V	Surface Mount	Non-Inverting	8-SOIC	360 mA	210 mA
Infineon Technologies IR2104STRPBF	20 V	10 VDC	Half-Bridge	Synchronous	600 V	8-SOIC	3.9 mm	0.154 in	IGBT N-Channel MOSFET	2	150 °C	-40 °C	50 ns	100 ns	0.8 V 3 V	Surface Mount	Non-Inverting	8-SOIC	360 mA	210 mA
Infineon Technologies IR2104STR	20 V	10 VDC	Half-Bridge	Synchronous	600 V	8-SOIC	3.9 mm	0.154 in	IGBT N-Channel MOSFET	2	150 °C	-40 °C	50 ns	100 ns	0.8 V 3 V	Surface Mount	Non-Inverting	8-SOIC	360 mA	210 mA
Infineon Technologies IR2104SPBF	20 V	10 VDC	Half-Bridge	Synchronous	600 V	8-SOIC	3.9 mm	0.154 in	IGBT N-Channel MOSFET	2	150 °C	-40 °C	50 ns	100 ns	0.8 V 3 V	Surface Mount	Non-Inverting	8-SOIC	360 mA	210 mA

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 2.31
		10	$ 1.48
		25	$ 1.27
		100	$ 1.02
		250	$ 0.90
		500	$ 0.83
		1000	$ 0.77
	Digi-Reel®	1	$ 2.31
		10	$ 1.48
		25	$ 1.27
		100	$ 1.02
		250	$ 0.90
		500	$ 0.83
		1000	$ 0.77
	Tape & Reel (TR)	2500	$ 0.70
		5000	$ 0.66
		7500	$ 0.64
		12500	$ 0.62

Description

General part information

IR2104 Series

The IR2104STRPBF is a high voltage high speed power MOSFET and IGBT Half-Bridge Driver with dependent high and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates from 10 to 600V.

Documents

Technical documentation and resources

Technical Data Sheet EN

Datasheet