IC GATE DRVR HALF-BRIDGE 8SOIC
| Part | Voltage - Supply [Max] | Voltage - Supply [Min] | Driven Configuration | Channel Type | High Side Voltage - Max (Bootstrap) [Max] | Package / Case | Package / Case [y] | Package / Case [x] | Gate Type | Number of Drivers | Operating Temperature [Max] | Operating Temperature [Min] | Rise / Fall Time (Typ) [custom] | Rise / Fall Time (Typ) [custom] | Logic Voltage - VIL, VIH | Mounting Type | Input Type | Supplier Device Package | Current - Peak Output (Source, Sink) [custom] | Current - Peak Output (Source, Sink) [custom] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 20 V | 10 VDC | Half-Bridge | Synchronous | 600 V | 8-SOIC | 3.9 mm | 0.154 in | IGBT N-Channel MOSFET | 2 | 150 °C | -40 °C | 50 ns | 100 ns | 0.8 V 3 V | Surface Mount | Non-Inverting | 8-SOIC | 360 mA | 210 mA |
Infineon Technologies | 20 V | 10 VDC | Half-Bridge | Synchronous | 600 V | 8-SOIC | 3.9 mm | 0.154 in | IGBT N-Channel MOSFET | 2 | 150 °C | -40 °C | 50 ns | 100 ns | 0.8 V 3 V | Surface Mount | Non-Inverting | 8-SOIC | 360 mA | 210 mA |
Infineon Technologies | 20 V | 10 VDC | Half-Bridge | Synchronous | 600 V | 8-SOIC | 3.9 mm | 0.154 in | IGBT N-Channel MOSFET | 2 | 150 °C | -40 °C | 50 ns | 100 ns | 0.8 V 3 V | Surface Mount | Non-Inverting | 8-SOIC | 360 mA | 210 mA |
Infineon Technologies | 20 V | 10 VDC | Half-Bridge | Synchronous | 600 V | 8-SOIC | 3.9 mm | 0.154 in | IGBT N-Channel MOSFET | 2 | 150 °C | -40 °C | 50 ns | 100 ns | 0.8 V 3 V | Surface Mount | Non-Inverting | 8-SOIC | 360 mA | 210 mA |