DMNH6011LK3-13

Active

Diodes Inc

N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet Recommended Soldering Techniques +1

DMNH6011LK3-13

Active

Diodes Inc

N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

DocumentsDatasheet Recommended Soldering Techniques +1

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	DMNH6011LK3-13

Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	49.1 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	3077 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	12 mOhm
Supplier Device Package	TO-252 (DPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	2 V

DMNH6011LK3 Series

N-Channel Enhancement Mode MOSFET

Part	Mounting Type	Grade	FET Type	Rds On (Max) @ Id, Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Qualification	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Technology	Vgs(th) (Max) @ Id
Diodes Inc DMNH6011LK3-13	Surface Mount	Automotive	N-Channel	12 mOhm	12 V	3077 pF	49.1 nC	TO-252 (DPAK)	AEC-Q101	DPAK (2 Leads + Tab) SC-63 TO-252-3	-55 °C	175 ░C	4.5 V 10 V	55 V	MOSFET (Metal Oxide)	2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tape & Reel (TR)	2500	$ 0.54
		5000	$ 0.51

Description

General part information

DMNH6011LK3 Series

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.