DMNH6011LK3 Series

N-Channel Enhancement Mode MOSFET

Catalog

N-Channel Enhancement Mode MOSFET

Part	Mounting Type	Grade	FET Type	Rds On (Max) @ Id, Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Qualification	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Technology	Vgs(th) (Max) @ Id
Diodes Inc DMNH6011LK3-13	Surface Mount	Automotive	N-Channel	12 mOhm	12 V	3077 pF	49.1 nC	TO-252 (DPAK)	AEC-Q101	DPAK (2 Leads + Tab) SC-63 TO-252-3	-55 °C	175 ░C	4.5 V 10 V	55 V	MOSFET (Metal Oxide)	2 V

Catalog

N-Channel Enhancement Mode MOSFET

Key Features

• Rated to 175°C – Ideal for High Ambient Temperature Environments

• 100% Unclamped Inductive Switching – Ensures more Reliable and Robust End Application

• Low On-Resistance

• Low Input Capacitance

• Lead-Free Finish; RoHS Compliant

• Halogen and Antimony Free. "Green" Device

• Qualified to AEC-Q101 Standards for High Reliability

Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.