AOT412

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 100V 8.2A/60A TO220

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Alpha & Omega Semiconductor Inc.

MOSFET N-CH 100V 8.2A/60A TO220

Technical Specifications

Parameters and characteristics for this part

Specification	AOT412

Current - Continuous Drain (Id) @ 25°C	8.2 A, 60 A
Drain to Source Voltage (Vdss)	100 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	54 nC
Input Capacitance (Ciss) (Max) @ Vds	3220 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	2.6 W, 150 W
Rds On (Max) @ Id, Vgs	15.8 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	3.8 V

Part	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Technology	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Package / Case	Vgs (Max)	Vgs(th) (Max) @ Id	FET Type	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]
Alpha & Omega Semiconductor Inc. AOT416	1.92 W 150 W	23 nC	MOSFET (Metal Oxide)	Through Hole	-55 °C	175 ░C	100 V	37 mOhm	TO-220-3	25 V	4 V	N-Channel	TO-220	1450 pF	4.7 A 42 A
Alpha & Omega Semiconductor Inc. AOT412	2.6 W 150 W	54 nC	MOSFET (Metal Oxide)	Through Hole	-55 °C	175 ░C	100 V	15.8 mOhm	TO-220-3	25 V	3.8 V	N-Channel	TO-220	3220 pF	8.2 A 60 A
Alpha & Omega Semiconductor Inc. AOT418L	2.1 W 333 W		MOSFET (Metal Oxide)	Through Hole	-55 °C	175 ░C	100 V	10 mOhm	TO-220-3	25 V	3.9 V	N-Channel	TO-220	5200 pF	9.5 A 105 A	83 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1000	$ 0.81