Specification	AOT412

Current - Continuous Drain (Id) (Ta)	8.2 A
Current - Continuous Drain (Id) (Tc)	60 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On)	7 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	54 nC
Input Capacitance (Ciss) (Max)	3220 pF
Mounting Type	Through Hole
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-220-3
Package Name	TO-220
Power Dissipation (Max)	2.6 W, 150 W
Rds On (Max)	15.8 mOhm, 15.8 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max)	3.8 V

AOT41 Series

Part	Rds On (Max)	Vgs(th) (Max)	Current - Continuous Drain (Id) (Tc)	Current - Continuous Drain (Id) (Ta)	Technology	Package Name	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	FET Type	Input Capacitance (Ciss) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Vgs (Max)	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Gate Charge (Max)	Mounting Type	Package / Case
Alpha & Omega Semiconductor Inc. AOT416	37 mOhm	4 V	42 A	4.7 A	MOSFET (Metal Oxide)	TO-220	10 V	7 V	N-Channel	1450 pF	-55 °C	175 °C	25 V	1.92 W 150 W	100 V	23 nC	Through Hole	TO-220-3
Alpha & Omega Semiconductor Inc. AOT412	15.8 mOhm 15.8 mOhm	3.8 V	60 A	8.2 A	MOSFET (Metal Oxide)	TO-220	10 V	7 V	N-Channel	3220 pF	-55 °C	175 °C	25 V	2.6 W 150 W	100 V	54 nC	Through Hole	TO-220-3
Alpha & Omega Semiconductor Inc. AOT418L	10 mOhm	3.9 V	105 A	9.5 A	MOSFET (Metal Oxide)	TO-220	10 V	7 V	N-Channel	5200 pF	-55 °C	175 °C	25 V	2.1 W 333 W	100 V	83 nC	Through Hole	TO-220-3

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