MOSFET N-CH 100V 4.7A/42A TO220
| Part | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs | Technology | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Package / Case | Vgs (Max) | Vgs(th) (Max) @ Id | FET Type | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Alpha & Omega Semiconductor Inc. | 1.92 W 150 W | 23 nC | MOSFET (Metal Oxide) | Through Hole | -55 °C | 175 ░C | 100 V | 37 mOhm | TO-220-3 | 25 V | 4 V | N-Channel | TO-220 | 1450 pF | 4.7 A 42 A | |
Alpha & Omega Semiconductor Inc. | 2.6 W 150 W | 54 nC | MOSFET (Metal Oxide) | Through Hole | -55 °C | 175 ░C | 100 V | 15.8 mOhm | TO-220-3 | 25 V | 3.8 V | N-Channel | TO-220 | 3220 pF | 8.2 A 60 A | |
Alpha & Omega Semiconductor Inc. | 2.1 W 333 W | MOSFET (Metal Oxide) | Through Hole | -55 °C | 175 ░C | 100 V | 10 mOhm | TO-220-3 | 25 V | 3.9 V | N-Channel | TO-220 | 5200 pF | 9.5 A 105 A | 83 nC |