IRS2109STRPBF

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Infineon Technologies

EICEDRIVER™ 600 V HALF BRIDGE DRIVER IC WITH TYPICAL 0.29 A SOURCE AND 0.6 A SINK OUTPUT CURRENTS. IT COMES WITH A FUNCTIONAL LEVELSHIFT SOIC 8N PACKAGE AND WORKS WITH IGBTS AND MOSFETS. FEATURES: ENABLE, SHOOT THROUGH PROTECTION, SHUTDOWN, SINGLE INPUT

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IRS2109STRPBF

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Infineon Technologies

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Technical Specifications

Parameters and characteristics for this part

Specification	IRS2109STRPBF

Channel Type	Synchronous
Current - Peak Output (Source, Sink) [custom]	290 mA
Current - Peak Output (Source, Sink) [custom]	600 mA
Driven Configuration	Half-Bridge
Gate Type	N-Channel MOSFET, IGBT
High Side Voltage - Max (Bootstrap) [Max]	600 V
Input Type	Non-Inverting
Logic Voltage - VIL, VIH	2.5 V, 0.8 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Rise / Fall Time (Typ) [custom]	35 ns
Rise / Fall Time (Typ) [custom]	100 ns
Supplier Device Package	8-SOIC
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	10 VDC

IRS2109 Series

Part	High Side Voltage - Max (Bootstrap) [Max]	Channel Type	Number of Drivers	Operating Temperature [Max]	Operating Temperature [Min]	Logic Voltage - VIL, VIH	Supplier Device Package	Mounting Type	Input Type	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Package / Case	Package / Case	Package / Case	Driven Configuration	Voltage - Supply [Max]	Voltage - Supply [Min]	Gate Type	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Package / Case [y]	Package / Case [x]
Infineon Technologies IRS2109PBF	600 V	Synchronous	2	150 °C	-40 °C	0.8 V 2.5 V	8-PDIP	Through Hole	Non-Inverting	290 mA	600 mA	0.3 in	8-DIP	7.62 mm	Half-Bridge	20 V	10 VDC	IGBT N-Channel MOSFET	35 ns	100 ns
Infineon Technologies IRS2109STRPBF	600 V	Synchronous	2	150 °C	-40 °C	0.8 V 2.5 V	8-SOIC	Surface Mount	Non-Inverting	290 mA	600 mA		8-SOIC		Half-Bridge	20 V	10 VDC	IGBT N-Channel MOSFET	35 ns	100 ns	3.9 mm	0.154 in
Infineon Technologies IRS2109PBF	600 V	Synchronous	2	150 °C	-40 °C	0.8 V 2.5 V	8-PDIP	Through Hole	Non-Inverting	290 mA	600 mA	0.3 in	8-DIP	7.62 mm	Half-Bridge	20 V	10 VDC	IGBT N-Channel MOSFET	35 ns	100 ns
Infineon Technologies IRS2109SPBF	600 V	Synchronous	2	150 °C	-40 °C	0.8 V 2.5 V	8-SOIC	Surface Mount	Non-Inverting	290 mA	600 mA		8-SOIC		Half-Bridge	20 V	10 VDC	IGBT N-Channel MOSFET	35 ns	100 ns	3.9 mm	0.154 in

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Arrow	N/A	2500	$ 0.51
		5000	$ 0.50
Digikey	Cut Tape (CT)	1	$ 1.34
		10	$ 1.20
		25	$ 1.13
		100	$ 0.93
		250	$ 0.87
		500	$ 0.77
		1000	$ 0.61
	Digi-Reel®	1	$ 1.34
		10	$ 1.20
		25	$ 1.13
		100	$ 0.93
		250	$ 0.87
		500	$ 0.77
		1000	$ 0.61
	Tape & Reel (TR)	2500	$ 0.57
		5000	$ 0.54
		12500	$ 0.52
Newark	Each (Supplied on Cut Tape)	1	$ 1.11
		10	$ 0.80
		25	$ 0.72
		50	$ 0.68
		100	$ 0.64
		250	$ 0.60
		500	$ 0.57
		1000	$ 0.53

Description

General part information

IRS2109 Series

600 Vhalf-bridgegate driver ICIGBTsandMOSFETswith typical 0.29 A source and 0.6 A sink currents in 8 Lead SOIC package. Also available in 8 Lead PDIP, 14 Lead SOIC, 14 Lead PDIP. For the new version with ourSOI technologywe recommend2ED2109S06F, providing integrated bootstrap diode, better robustness and higher switching frequency

Documents

Technical documentation and resources

No documents available