IC GATE DRVR HALF-BRIDGE 8DIP
| Part | High Side Voltage - Max (Bootstrap) [Max] | Channel Type | Number of Drivers | Operating Temperature [Max] | Operating Temperature [Min] | Logic Voltage - VIL, VIH | Supplier Device Package | Mounting Type | Input Type | Current - Peak Output (Source, Sink) [custom] | Current - Peak Output (Source, Sink) [custom] | Package / Case | Package / Case | Package / Case | Driven Configuration | Voltage - Supply [Max] | Voltage - Supply [Min] | Gate Type | Rise / Fall Time (Typ) [custom] | Rise / Fall Time (Typ) [custom] | Package / Case [y] | Package / Case [x] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 600 V | Synchronous | 2 | 150 °C | -40 °C | 0.8 V 2.5 V | 8-PDIP | Through Hole | Non-Inverting | 290 mA | 600 mA | 0.3 in | 8-DIP | 7.62 mm | Half-Bridge | 20 V | 10 VDC | IGBT N-Channel MOSFET | 35 ns | 100 ns | ||
Infineon Technologies | 600 V | Synchronous | 2 | 150 °C | -40 °C | 0.8 V 2.5 V | 8-SOIC | Surface Mount | Non-Inverting | 290 mA | 600 mA | 8-SOIC | Half-Bridge | 20 V | 10 VDC | IGBT N-Channel MOSFET | 35 ns | 100 ns | 3.9 mm | 0.154 in | ||
Infineon Technologies | 600 V | Synchronous | 2 | 150 °C | -40 °C | 0.8 V 2.5 V | 8-PDIP | Through Hole | Non-Inverting | 290 mA | 600 mA | 0.3 in | 8-DIP | 7.62 mm | Half-Bridge | 20 V | 10 VDC | IGBT N-Channel MOSFET | 35 ns | 100 ns | ||
Infineon Technologies | 600 V | Synchronous | 2 | 150 °C | -40 °C | 0.8 V 2.5 V | 8-SOIC | Surface Mount | Non-Inverting | 290 mA | 600 mA | 8-SOIC | Half-Bridge | 20 V | 10 VDC | IGBT N-Channel MOSFET | 35 ns | 100 ns | 3.9 mm | 0.154 in |