STL7NM60N

Obsolete

STMicroelectronics

MOSFET N-CH 600V 5.8A 14PWRFLAT

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STL7NM60N

Obsolete

STMicroelectronics

MOSFET N-CH 600V 5.8A 14PWRFLAT

Deep-Dive with AI

DocumentsDatasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STL7NM60N

Current - Continuous Drain (Id) @ 25°C	5.8 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	14 nC
Input Capacitance (Ciss) (Max) @ Vds	363 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	14-PowerVQFN
Power Dissipation (Max)	68 W
Rds On (Max) @ Id, Vgs	900 mOhm
Supplier Device Package	14-PowerFLAT™ (5x5)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

STL7N6LF3 Series

Automotive-grade N-channel 60 V, 35 mOhm typ., 6.5 A STripFET F3 Power MOSFET in a PowerFLAT 5x6 package

Part	FET Type	Technology	Power Dissipation (Max) [Max]	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Grade	Drain to Source Voltage (Vdss)	Vgs (Max)	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Qualification	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Rds On (Max) @ Id, Vgs	Operating Temperature	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs
STMicroelectronics STL7N6LF3	N-Channel	MOSFET (Metal Oxide)	4.3 W 52 W	PowerFlat™ (5x6)	20 A	8-PowerVDFN	-55 °C	175 ░C	Automotive	60 V	20 V	2.5 V	10 V	5 V	AEC-Q101	432 pF	8.7 nC	Surface Mount	43 mOhm
STMicroelectronics STL7N60M2	N-Channel	MOSFET (Metal Oxide)		PowerFLAT™ (5x5)	5 A	8-PowerVDFN				600 V	25 V	4 V				271 pF	8.8 nC	Surface Mount	1.05 Ohm	150 °C	4 W 67 W	10 V
STMicroelectronics STL7NM60N	N-Channel	MOSFET (Metal Oxide)		14-PowerFLAT™ (5x5)	5.8 A	14-PowerVQFN	-55 °C	150 °C		600 V	25 V	4 V				363 pF		Surface Mount	900 mOhm		68 W	10 V	14 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

STL7N6LF3 Series

This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.

Documents

Technical documentation and resources