STP5N80K5
ActiveN-CHANNEL 800 V, 1.50 OHM TYP., 4 A MDMESH K5 POWER MOSFET IN A TO-220 PACKAGE
STP5N80K5
ActiveN-CHANNEL 800 V, 1.50 OHM TYP., 4 A MDMESH K5 POWER MOSFET IN A TO-220 PACKAGE
Description
General part information
STP5N80K5 Series
This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on resistance and ultra-low gate charge for application requiring superior power density and high efficiency.
Technical Specifications
Parameters and characteristics for this part
| Specification | STP5N80K5 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 4 A |
| Drain to Source Voltage (Vdss) | 800 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 5 nC, 5 nC |
| Input Capacitance (Ciss) (Max) | 177 pF |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-220-3 |
| Package Name | TO-220 |
| Power Dissipation (Max) | 60 W |
| Rds On (Max) | 1.75 Ohm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) | 5 V |
Pricing
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CAD
3D models and CAD resources for this part