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STP5N80K5 - STMICROELECTRONICS BD242B

STP5N80K5

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STMicroelectronics

N-CHANNEL 800 V, 1.50 OHM TYP., 4 A MDMESH K5 POWER MOSFET IN A TO-220 PACKAGE

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Search across all available documentation for this part.

DocumentsProduct Change Notice ENAN2344+17
STP5N80K5 - STMICROELECTRONICS BD242B

STP5N80K5

Active
STMicroelectronics

N-CHANNEL 800 V, 1.50 OHM TYP., 4 A MDMESH K5 POWER MOSFET IN A TO-220 PACKAGE

Deep-Dive with AI

DocumentsProduct Change Notice ENAN2344+17

Technical Specifications

Parameters and characteristics for this part

SpecificationSTP5N80K5
Current - Continuous Drain (Id) @ 25°C4 A
Drain to Source Voltage (Vdss)800 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]5 nC
Input Capacitance (Ciss) (Max) @ Vds177 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max)60 W
Rds On (Max) @ Id, Vgs1.75 Ohm
Supplier Device PackageTO-220
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 2.44
50$ 1.16
100$ 1.07
500$ 0.86
1000$ 0.79
2000$ 0.73
5000$ 0.69
NewarkEach 1$ 2.78
10$ 1.57
100$ 1.45
500$ 1.23
1000$ 1.15
3000$ 1.11
5000$ 1.06

Description

General part information

STP5N80K5 Series

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on resistance and ultra-low gate charge for application requiring superior power density and high efficiency.