STP5N80K5 Series

N-channel 800 V, 1.50 Ohm typ., 4 A MDmesh K5 Power MOSFET in a TO-220 package

Catalog

N-channel 800 V, 1.50 Ohm typ., 4 A MDmesh K5 Power MOSFET in a TO-220 package

Part	Drive Voltage (Max Rds On, Min Rds On)	Technology	Vgs (Max)	Package / Case	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Supplier Device Package	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds
STMicroelectronics STP5N80K5	10 V	MOSFET (Metal Oxide)	30 V	TO-220-3	N-Channel	5 nC	Through Hole	4 A	5 V	1.75 Ohm	-55 °C	150 °C	800 V	TO-220	60 W	177 pF

Catalog

N-channel 800 V, 1.50 Ohm typ., 4 A MDmesh K5 Power MOSFET in a TO-220 package

Description

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on resistance and ultra-low gate charge for application requiring superior power density and high efficiency.