CSD17313Q2Q1T
ObsoleteAUTOMOTIVE 30-V N CHANNEL NEXFET™ POWER MOSFET
CSD17313Q2Q1T
ObsoleteAUTOMOTIVE 30-V N CHANNEL NEXFET™ POWER MOSFET
Description
General part information
CSD17313Q2Q1 Series
This 30-V, 24-mΩ, 2-mm × 2-mm SON NexFET™ power MOSFET is designed to minimize losses in power conversion applications and is optimized for 5-V gate drive applications. The 2-mm × 2-mm SON offers excellent thermal performance for the size of the package.
This 30-V, 24-mΩ, 2-mm × 2-mm SON NexFET™ power MOSFET is designed to minimize losses in power conversion applications and is optimized for 5-V gate drive applications. The 2-mm × 2-mm SON offers excellent thermal performance for the size of the package.
Technical Specifications
Parameters and characteristics for this part
| Specification | CSD17313Q2Q1T |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 5 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On) | 3 V |
| Drive Voltage (Min Rds On) | 8 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 2.7 nC, 2.7 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 340 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 6-WDFN Exposed Pad |
| Package Length | 2 mm |
| Package Name | 6-WSON |
| Package Width | 2 mm |
| Power Dissipation (Max) | 2.4 W, 17 W |
| Qualification | AEC-Q101 |
| Rds On (Max) | 30 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) Negative | -8 V |
| Vgs (Max) Positive | 10 V |
| Vgs(th) (Max) | 1.8 V |
Pricing
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CAD
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