STW48N60M2-4

Active

STMicroelectronics

N-CHANNEL 600 V, 60 MOHM TYP., 42 A MDMESH M2 POWER MOSFET IN A TO247-4 PACKAGE

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet +26

STW48N60M2-4

Active

STMicroelectronics

N-CHANNEL 600 V, 60 MOHM TYP., 42 A MDMESH M2 POWER MOSFET IN A TO247-4 PACKAGE

Deep-Dive with AI

DocumentsDatasheet +26

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STW48N60M2-4

Current - Continuous Drain (Id) @ 25°C	42 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	70 nC
Input Capacitance (Ciss) (Max) @ Vds	3060 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-247-4
Power Dissipation (Max) [Max]	300 W
Rds On (Max) @ Id, Vgs	70 mOhm
Supplier Device Package	TO-247-4
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

STW48N60M2-4 Series

N-channel 600 V, 60 mOhm typ., 42 A MDmesh M2 Power MOSFET in a TO247-4 package

Part	Mounting Type	Vgs (Max)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Package / Case	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature
STMicroelectronics STW48N60M6	Through Hole	25 V	TO-247-3	39 A	TO-247-3	600 V	69 mOhm	N-Channel	2578 pF	MOSFET (Metal Oxide)	-55 °C	150 °C	10 V	250 W	4.75 V	57 nC
STMicroelectronics STW48N60M2-4	Through Hole	25 V	TO-247-4	42 A	TO-247-4	600 V	70 mOhm	N-Channel	3060 pF	MOSFET (Metal Oxide)			10 V	300 W	4 V		70 nC	150 °C
STMicroelectronics STW48N60M2	Through Hole	25 V	TO-247-3	42 A	TO-247-3	600 V	70 mOhm	N-Channel	3060 pF	MOSFET (Metal Oxide)	-55 °C	150 °C	10 V	300 W	4 V		70 nC
STMicroelectronics STW48N60M6-4	Through Hole	25 V	TO-247-4	39 A	TO-247-4	600 V	69 mOhm	N-Channel	2578 pF	MOSFET (Metal Oxide)	-55 °C	150 °C	10 V	250 W	4.75 V	57 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 9.14
		30	$ 5.37
		120	$ 4.54
		510	$ 4.09

Description

General part information

STW48N60M2-4 Series

The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on)per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.

STW48N60M2-4

Deep-Dive with AI

STW48N60M2-4

Deep-Dive with AI

Technical Specifications

STW48N60M2-4 Series

Pricing

Description

STW48N60M2-4 Series

Documents

Datasheet

TN1378

AN2842

AN4742

AN4720

AN4250

AN2344

DS10507

AN4829

AN4407

TN1225

TN1156

UM1575

TN1224

AN5318

AN4337

AN4406

Datasheet

STW48N60M2-4 Series