STW48N60M2
ActiveN-CHANNEL 600 V, 60 MOHM TYP., 42 A MDMESH M2 POWER MOSFET IN A TO-247 PACKAGE
Deep-Dive with AI
Search across all available documentation for this part.
STW48N60M2
ActiveN-CHANNEL 600 V, 60 MOHM TYP., 42 A MDMESH M2 POWER MOSFET IN A TO-247 PACKAGE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | STW48N60M2 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 42 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 70 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 3060 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) [Max] | 300 W |
| Rds On (Max) @ Id, Vgs | 70 mOhm |
| Supplier Device Package | TO-247-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STW48N60M2-4 Series
The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on)per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.
Documents
Technical documentation and resources