
IRG8P25N120KD-EPBF
ObsoleteInfineon Technologies
IRG8P25N120 - DISCRETE IGBT WITH
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IRG8P25N120KD-EPBF
ObsoleteInfineon Technologies
IRG8P25N120 - DISCRETE IGBT WITH
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | IRG8P25N120KD-EPBF |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 40 A |
| Current - Collector Pulsed (Icm) | 45 A |
| Gate Charge | 135 nC |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | TO-247-3 |
| Power - Max [Max] | 180 W |
| Reverse Recovery Time (trr) | 70 ns |
| Supplier Device Package | TO-247AD |
| Switching Energy | 800 µJ, 900 µJ |
| Td (on/off) @ 25°C | 170 ns, 20 ns |
| Test Condition | 600 V, 15 A, 10 Ohm, 15 V |
| Vce(on) (Max) @ Vge, Ic | 2 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 1200 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 73 | $ 4.14 | |
| 73 | $ 4.14 | |||
Description
General part information
IRG8P Series
IGBT 1200 V 40 A 180 W Through Hole TO-247AD
Documents
Technical documentation and resources