IPI50R140CP
ObsoleteInfineon Technologies
MOSFET N-CH 550V 23A TO262-3
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IPI50R140CP
ObsoleteInfineon Technologies
MOSFET N-CH 550V 23A TO262-3
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IPI50R140CP |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 23 A |
| Drain to Source Voltage (Vdss) | 550 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 64 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 2540 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-262AA, TO-262-3 Long Leads, I2PAK |
| Power Dissipation (Max) | 192 W |
| Rds On (Max) @ Id, Vgs [Max] | 140 mOhm |
| Supplier Device Package | PG-TO262-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id [Max] | 3.5 V |
IPI50R Series
| Part | Rds On (Max) @ Id, Vgs | Package / Case | Supplier Device Package | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Technology | FET Type | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs(th) (Max) @ Id [Max] | Rds On (Max) @ Id, Vgs [Max] | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 350 mOhm | I2PAK TO-262-3 Long Leads TO-262AA | PG-TO262-3 | 20 V | 10 A | 10 V | 3.5 V | 550 V | MOSFET (Metal Oxide) | N-Channel | -55 °C | 150 °C | Through Hole | 1020 pF | 25 nC | ||||
Infineon Technologies | I2PAK TO-262-3 Long Leads TO-262AA | 20 V | 23 A | 10 V | 500 V | MOSFET (Metal Oxide) | N-Channel | -55 °C | 150 °C | Through Hole | 2540 pF | 64 nC | 3.5 V | 140 mOhm | 192 W | ||||
Infineon Technologies | I2PAK TO-262-3 Long Leads TO-262AA | PG-TO262-3 | 20 V | 23 A | 10 V | 550 V | MOSFET (Metal Oxide) | N-Channel | -55 °C | 150 °C | Through Hole | 2540 pF | 64 nC | 3.5 V | 140 mOhm | 192 W | |||
Infineon Technologies | 299 mOhm | I2PAK TO-262-3 Long Leads TO-262AA | PG-TO262-3 | 20 V | 12 A | 10 V | 3.5 V | 500 V | MOSFET (Metal Oxide) | N-Channel | -55 °C | 150 °C | Through Hole | 1190 pF | 104 W | 31 nC |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
IPI50R Series
CoolMOS™ CP, Infineon's fifth series of CoolMOS™, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV.
Documents
Technical documentation and resources