IPI50R Series

Catalog

COOLMOS™ CP N-CHANNEL SUPERJUNCTION MOSFET 500 V ; I2PAK TO-262 PACKAGE; 350 MOHM;

Part	Rds On (Max) @ Id, Vgs	Package / Case	Supplier Device Package	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Technology	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id [Max]	Rds On (Max) @ Id, Vgs [Max]	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs
Infineon Technologies IPI50R350CP	350 mOhm	I2PAK TO-262-3 Long Leads TO-262AA	PG-TO262-3	20 V	10 A	10 V	3.5 V	550 V	MOSFET (Metal Oxide)	N-Channel	-55 °C	150 °C	Through Hole	1020 pF	25 nC
Infineon Technologies IPI50R140CPXKSA1		I2PAK TO-262-3 Long Leads TO-262AA		20 V	23 A	10 V		500 V	MOSFET (Metal Oxide)	N-Channel	-55 °C	150 °C	Through Hole	2540 pF	64 nC	3.5 V	140 mOhm	192 W
Infineon Technologies IPI50R140CP		I2PAK TO-262-3 Long Leads TO-262AA	PG-TO262-3	20 V	23 A	10 V		550 V	MOSFET (Metal Oxide)	N-Channel	-55 °C	150 °C	Through Hole	2540 pF	64 nC	3.5 V	140 mOhm	192 W
Infineon Technologies IPI50R299CPXKSA1	299 mOhm	I2PAK TO-262-3 Long Leads TO-262AA	PG-TO262-3	20 V	12 A	10 V	3.5 V	500 V	MOSFET (Metal Oxide)	N-Channel	-55 °C	150 °C	Through Hole	1190 pF				104 W	31 nC