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DD1200S17H4B2BOSA2 - IHMDiode1682170244

DD1200S17H4B2BOSA2

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Infineon Technologies

THE DD1200S17H4_B2 IS A DIODES DIODE MODULE IN A IHM B HOUSING FOR INDUSTRIAL&TRACTION APPLICATIONS UP TO 1700 V AND 1200 A.

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DD1200S17H4B2BOSA2 - IHMDiode1682170244

DD1200S17H4B2BOSA2

Active
Infineon Technologies

THE DD1200S17H4_B2 IS A DIODES DIODE MODULE IN A IHM B HOUSING FOR INDUSTRIAL&TRACTION APPLICATIONS UP TO 1700 V AND 1200 A.

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDD1200S17H4B2BOSA2
Diode Configuration2 Independent
Mounting TypeChassis Mount
Operating Temperature - Junction [Max]150 °C
Operating Temperature - Junction [Min]-40 °C
Package / CaseModule
SpeedStandard Recovery >500ns
Speed200 mA
Supplier Device PackageAG-IHMB130-1
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]1700 V
Voltage - Forward (Vf) (Max) @ If2.1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTray 1$ 942.61
10$ 909.73

Description

General part information

DD1200 Series

1700 V, 1200 AIHMB130 mm Diode Module with AlSiC base-plate and Emitter Controlled 4 - Diode - The best solution for your traction and industry applications. Predestined to be combined withIGBT4 products.